Adoption of MBIT process. Package Dimensions
unit:mm 2022A
[2SC3552]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg
Tc=25˚.
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Ordering number:EN1597C
NPN Triple Diffused Planar Silicon Transistor
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2SC3552
800V/12A Switching Regulator Applications
Features
· High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process.