The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Ordering number:ENN544G
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1011/2SC2344
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications
Package Dimensions
unit:mm 2010C
[2SA1011/2SC2344]
10.2 3.6 5.1 4.5 1.3
2.7 18.0 5.6
1.2 0.8
14.0
15.1
6.3
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
w w w . D a t a S
2.55
2.55
Conditions
2.7
( ) : 2SA1011
1
2
3
1 : Base 2 : Collector 3 : Emitter SANYO : TO220AB
Ratings (–)180 (–)160 Unit V V V A A W
˚C ˚C
h
e
e
t
.
c
o
.
k
r
(–)6 (–)1.
C2344 Datasheet
