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Sanyo Electric Components Datasheet

CPH6429 Datasheet

Medium Output MOSFETs

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Ordering number : ENN8081
CPH6429
CPH6429
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (1200mm2!0.8mm)
Ratings
60
±10
2
8
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
www.DataFSorhweaerdt4TUra.cnosfmer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : ZF
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4V
ID=1A, VGS=2.5V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
min
60
0.4
1.8
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.3 V
3.6 S
170 220 m
190 270 m
325 pF
29 pF
21 pF
11 ns
17 ns
40 ns
27 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81004 TS IM TA-3757 No.8081-1/4


Sanyo Electric Components Datasheet

CPH6429 Datasheet

Medium Output MOSFETs

No Preview Available !

CPH6429
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=30V, VGS=4V, ID=2A
VDS=30V, VGS=4V, ID=2A
VDS=30V, VGS=4V, ID=2A
IS=2A, VGS=0
Ratings
min typ max
Unit
4.2 nC
1.1 nC
1.1 nC
0.86
1.2 V
Package Dimensions
unit : mm
2151A
2.9
6 54
0.15
0.05
12 3
0.95
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=1A
RL=30
D VOUT
CPH6429
P.G 50S
ID -- VDS
2.0
1.8
1.6
1.4
1.2
www.DataSheet4U.com
1.0
0.8
VGS=1.5V
0.6
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT06812
RDS(on) -- VGS
500
Ta=25°C
ID=1.0A
400
300
200
100
0
0 2 4 6 8 10
Gate-to-Source Voltage, VGS -- V IT06814
4.0
VDS=10V
3.5
3.0
ID -- VGS
2.5
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Gate-to-Source Voltage, VGS -- V IT06813
RDS(on) -- Ta
400
350
300
250
200
150
I D=I D1A=1, AV,GVS=G2S.=5V4.0V
100
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06815
No.8081-2/4


Part Number CPH6429
Description Medium Output MOSFETs
Maker Sanyo Semiconductor
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CPH6429 Datasheet PDF






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