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Sanyo Electric Components Datasheet

CPH6424 Datasheet

Medium Output MOSFETs

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Ordering number : ENN7423
CPH6424
N-Channel Silicon MOSFET
CPH6424
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Package Dimensions
unit : mm
2151A
[CPH6424]
2.9 0.15
6 54
0.05
Specifications
Absolute Maximum Ratings at Ta=25°C
12 3
0.95
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
www.DaEtalSehceterti4cUa.lcoCmharacteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (1200mm2!0.8mm)
Ratings
60
±20
3
12
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : ZA
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=1.5A, VGS=4V
min
60
1.2
2.3
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
3.4 S
110 145 m
150 215 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS IM TA-100449 No.7423-1/4


Sanyo Electric Components Datasheet

CPH6424 Datasheet

Medium Output MOSFETs

No Preview Available !

CPH6424
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=3A
VDS=30V, VGS=10V, ID=3A
VDS=30V, VGS=10V, ID=3A
IS=3A, VGS=0
Switching Time Test Circuit
VIN
10V
0V
PW=10µs
D.C.1%
VIN
G
VDD=30V
ID=1.5A
RL=20
D VOUT
P.G 50
S CPH6424
Ratings
min typ max
Unit
266 pF
54 pF
34 pF
8 ns
8 ns
33 ns
30 ns
7.8 nC
2.4 nC
1.7 nC
0.84
1.2 V
6
5
4
www.DataSheet4U.com
3
ID -- VDS
5.0V
4.0V
V
GS=3.5V
2
1
0
0 0.2 0.4 0.6 0.8 1.0
Drain-to-Source Voltage, VDS -- V IT05850
RDS(on) -- VGS
300
280 Ta=25°C
260 ID=1.5A
240
220
200
180
160
140
120
100
80
60
40
20
0
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT05852
6
VDS=10V
5
ID -- VGS
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT05851
RDS(on) -- Ta
300
280
260
240
220
200
180
160
140
120
I D=ID1.=51A.5, VA,GVS=G4SV=10V
100
80
60
40
20
0
--60 --40 --20
0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05853
No.7423-2/4


Part Number CPH6424
Description Medium Output MOSFETs
Maker Sanyo Semiconductor
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CPH6424 Datasheet PDF






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