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TT3031NP - PNP Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤10µs, duty cycle≤10% Condition.

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Ordering number : ENA0330 TT3031NP www.DataSheet4U.com SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor TT3031NP Applications • 50V / 3A High-Speed Switching Applications High-speed switching applications (switching regulator, driver circuit). Features • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤10µs, duty cycle≤10% Conditions Ratings --50 --50 --6 --3 --5 --1 0.