TIG030TS
Features
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N-Channel IGBT
Light-Controlling Flash Applications
Low-saturation voltage. 4V drive. Enhansment type. Built-in gate-to-emitter protection diode. Mounting height 1.1mm, mounting area 19.2mm2. dv / dt guarantee.-
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP d VCE / dt Tch Tstg PW≤1ms PW≤500µs, duty cycle≤0.5%, CM=400µF VCE≤320V, starting Tch=25°C Conditions Ratings 400 ±6 ±8 150 400 150 --40 to +150 Unit V V V A V / µs °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Symbol V(BR)CES ICES IGES Conditions IC=2m A, VGE=0V VCE=320V, VGE=0V VGE=±6V, VCE=0V Ratings min 400 10 ±10 typ max Unit V µA µA
Marking : G030
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