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Sanyo Electric Components Datasheet

PCP1208 Datasheet

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Ordering number : ENA1836
PCP1208
SANYO Semiconductors
DATA SHEET
PCP1208
NPN Epitaxial Planar Silicon Transistor
LED Back Light
Features
VCEO=200V, IC=0.7A
High allowable power dissipation Halogen free compliance
Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A
High-speed switching tf=70ns(typ.)@IC=0.3A
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (450mm2×0.8mm)
Tc=25°C
Ratings
220
200
8
0.7
2
140
1.3
3.5
150
-55 to +150
Unit
V
V
V
A
A
mA
W
W
°C
°C
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity
: 1000 pcs./reel
1.5
Packing Type : TD
Marking
1
0.4
0.5
2
1.5
3.0
3
0.75
Bottom View
TD
0.4
Electrical Connection
2
1
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
3
http://semicon.sanyo.com/en/network
12611CB TKIM TC-00002563 No. A1836-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

PCP1208 Datasheet

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www.DataSheet.co.kr
PCP1208
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=100V, IE=0A
VEB=4V, IC=0A
VCE=5V, IC=100mA
VCE=10V, IC=100mA
VCB=10V, f=1MHz
IC=0.35A, IB=35mA
IC=0.35A, IB=35mA
IC=10μA, IE=0A
IC=1mA, RBE=
IE=10μA, IC=0A
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
Ratings
min typ
200
120
9
115
0.82
220
200
8
50
2
70
max
1
1
560
200
1.2
Unit
μA
μA
MHz
pF
mV
V
V
V
V
ns
μs
ns
Switching Time Test Circuit
PW=50μs
D.C.1%
INPUT
50Ω
IB1
IB2
RB
OUTPUT
RL
+
820μF
VCC=100V
IC=10IB1= --10IB2=0.3A
1.0 IC -- VCE
100mA
0.9 80mA
0.8 60mA
0.7 50mA
40mA
0.6 30mA
0.5 20mA
0.4 4mA 6mA 8mA 10mA
0.3
0.2
0.1 2mA
0 IB=0mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter
IC --
Voltage,
VBE
VCE
--
V
IT15952
0.8
VCE=5V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-to-Emitter Voltage, VBE -- V IT15954
0.20
0.18
0.16
0.14
0.12 1mA
0.10
0.08
IC -- VCE
600μA
700μA
500μA
400μA
300μA
200μA
0.06
0.04 100μA
0.02
0
0
1000
7
5
3
2
100
7
5
3
2
IB=0μA
1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage,
hFE -- IC
VCE
--
V
IT15953
Ta=75°C
VCE=5V
25°C
--25°C
10
7
5
3
2
1.0
0.01
23
5 7 0.1
23
Collector Current, IC -- A
5 7 1.0
IT15955
No. A1836-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number PCP1208
Description LED Back Light
Maker Sanyo Semicon Device
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PCP1208 Datasheet PDF






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