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PCP1208 - LED Back Light

Key Features

  • NPN Epitaxial Planar Silicon Transistor LED Back Light.
  • High allowable power dissipation.
  • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ. )@IC=0.35A High-speed switching tf=70ns(typ. )@IC=0.3A Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current C.

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Other Datasheets by SANYO (now Panasonic)

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PCP1201 NPN Epitaxial Planar Silicon Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENA1836 PCP1208 SANYO Semiconductors DATA SHEET PCP1208 Features • • • NPN Epitaxial Planar Silicon Transistor LED Back Light • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3A Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg When mounted on ceramic substrate (450mm2×0.8mm) Tc=25°C Conditions Ratings 220 200 8 0.7 2 140 1.3 3.