PCP1204
Features
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Adoption of FBET, MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. High allowable power dissipation. Halogen free pliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg When mounted on ceramic substrate (450mm2×0.8mm) Tc=25°C Conditions Ratings 80 50 5 1.5 3 200 1.3 3.5 150 -55 to +150 Unit V V V A A m A W W °C °C
Marking : QK
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, munication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for...
