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Sanyo Electric Components Datasheet

PCP1203 Datasheet

NPN Epitaxial Planar Silicon Transistor

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Ordering number : ENA1348
PCP1203
SANYO Semiconductors
DATA SHEET
PCP1203
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Applications
DC / DC converters, relay drivers, lamp drivers, motor drivers, Inverters, IGBT gate drivers.
Features
Adoption of FBET, MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High speed switching.
High allowable power dissipation.
Halogen free compliance.
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Marking : QJ
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (450mm2×0.8mm)
Tc=25°C
Ratings
40
30
5
1.5
5
300
1.3
3.5
150
-55 to +150
Unit
V
V
V
A
A
mA
W
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
N1208EA MS IM TC-00001722 No. A1348-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

PCP1203 Datasheet

NPN Epitaxial Planar Silicon Transistor

No Preview Available !

www.DataSheet.co.kr
PCP1203
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=30V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=100mA
VCE=10V, IC=300mA
VCB=10V, f=1MHz
IC=0.75A, IB=15mA
IC=0.75A, IB=15mA
IC=10μA, IE=0A
IC=1mA, RBE=
IE=10μA, IC=0A
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
Ratings
min typ
200
500
8
150
0.85
40
30
5
35
205
30
max
0.1
0.1
560
225
1.2
Unit
μA
μA
MHz
pF
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7007A-004
Top View
4.5
1.6
1.5
1
0.4
0.5
2
1.5
3.0
3
0.4
Switching Time Test Circuit
PW=50μs
D.C.1%
INPUT
50Ω
IB1
IB2
RB
OUTPUT
RL
+
820μF
VCC=12V
IC=20IB1= --20IB2=0.75A
0.75
1 : Base
2 : Collector
3 : Emitter
Bot t om View
SANYO : PCP
IC -- VCE
2.0
1.8
40mA
30mA
1.6 20mA
1.4
1.2 10mA
8mA
1.0 6mA
0.8 4mA
0.6 2mA
0.4
0.2
0 IB=0mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT14121
1.6
VCE=2V
1.4
1.2
1.0
IC -- VBE
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT14122
No. A1348-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number PCP1203
Description NPN Epitaxial Planar Silicon Transistor
Maker Sanyo Semicon Device
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PCP1203 Datasheet PDF






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