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Sanyo Electric Components Datasheet

PCP1202 Datasheet

NPN Epitaxial Planar Silicon Transistor

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Ordering number : ENA1165
PCP1202
SANYO Semiconductors
DATA SHEET
PCP1202 NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.
Features
Adoption of FBET, MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Marking : QI
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (450mm20.8mm)
Tc=25°C
Ratings
180
180
150
7
2
3
400
1.3
3.5
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73008EA TI IM TC-00001470 No. A1165-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

PCP1202 Datasheet

NPN Epitaxial Planar Silicon Transistor

No Preview Available !

www.DataSheet.co.kr
PCP1202
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=80V, IE=0A
VEB=4V, IC=0A
VCE=5V, IC=100mA
VCE=10V, IC=300mA
VCB=10V, f=1MHz
IC=1A, IB=100mA
IC=0.5A, IB=50mA
IC=1A, IB=100mA
IC=10μA, IE=0A
IC=100μA, RBE=0Ω
IC=1mA, RBE=
IE=10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ
200
140
12
110
65
0.85
180
180
150
7
50
1460
70
max
1
1
560
165
100
1.2
Unit
μA
μA
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7008A-003
Top View
4.5
1.6
1.5
Switching Time Test Circuit
PW=20μs
D.C.1%
INPUT VR
IB1
IB2
RB
OUTPUT
RL
1
0.4
0.5
2
1.5
3.0
3
0.4
50Ω
+
100μF
VBE= --5V
IC=10IB1= --10IB2=0.5A
+
470μF
VCC=75V
0.75
Bottom View
2.0
1.5
1.0
0.5
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
IC -- VCE
120mA 100mA 80mA
60mA
40mA
20mA
10mA
5mA
0 IB=0mA
0 0.1 0.2 0.3 0.4 0.5
Collector-to-Emitter Voltage, VCE -- V IT13542
IC -- VCE
2.0
100mA 80mA
1.5
120mA
200mA
1.0
0.5
60mA
40mA
20mA
10mA
5mA
2mA
1mA
0 IB=0mA
01 2 34 5
Collector-to-Emitter Voltage, VCE -- V IT13543
No. A1165-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number PCP1202
Description NPN Epitaxial Planar Silicon Transistor
Maker Sanyo Semicon Device
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PCP1202 Datasheet PDF






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