Adoption of FBET, MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. High allowable power dissipation. Halogen free compliance. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Tempe.