MCH6732 Datasheet | SANYO

Features - - NPN Epitaxial Planar Silicon Transistor Schottky Barrier Diode DC / DC Converter Applications posite type with a NPN transistor and a Schottky barrier diode contained in one package facilitatiing high-density mounting. Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm). Specifications Absolute Maximum Ratings at Ta=25°C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 0.5 2 --55 to +125 --55 to +125 V V A A °C °C VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) 20 15 5 1 2 0.7 150 --55 to +125 V V V A A W °C °C Symbol Conditions Ratings Unit Marking : PG Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor pany TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 63004 TS IM TA-100823 No.7758-1/5 Electrical Characteristics at...