File Size : 281.06KB ·
2 hits
• Highly reliable 2-layer polysilicon CMOS flash EEPROM process
• Read and write operations using a 5 V single-voltage power supply
• Fast access time: 90, 120, and 150 ns
• Low power dissipation — Operating current (read): 30 mA (maximum) — Standby current: 20 µA (maximum)
• Highly reliable read/wr.
