Datasheet4U Logo Datasheet4U.com

FX207 - P-Channel MOSFET

Key Features

  • Low ON-resistance.
  • Very high-speed switching.
  • 2.5V drive. Package Dimensions unit:mm 2121 [FX207] Switching Time Test CIrcuit 1:No Contact 2:Gate 3:Source 4:No Contact 5:Drain 6:Drain SANYO:XP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PD Tch Tstg PW≤10µs, dut.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FX2000A Superfast Silicon Rectifier Diodes Diotec
FX2000B Superfast Silicon Rectifier Diodes Diotec
FX2000D Superfast Silicon Rectifier Diodes Diotec
FX2000F Superfast Silicon Rectifier Diodes Diotec
FX2000G Superfast Silicon Rectifier Diodes Diotec

Other Datasheets by SANYO (now Panasonic)

Part Number Description
FX203 P-Channel MOSFET
FX205 P-Channel MOSFET
FX208 N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN5050 FX207 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features · Low ON-resistance. · Very high-speed switching. · 2.5V drive. Package Dimensions unit:mm 2121 [FX207] Switching Time Test CIrcuit 1:No Contact 2:Gate 3:Source 4:No Contact 5:Drain 6:Drain SANYO:XP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on ceramic board (750mm2×0.