FTD2012 - N-Channel MOSFET

SANYO (now Panasonic)

Features

Low ON-state resistance.
4V drive.
Mount height of 1.1mm.
Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forwa.

Part Number	Description	Manufacturer
FTD2017	Dual N-Channel 25V MOSFET	VBsemi
FTD2019A	N-Channel MOSFET	Sanyo
FTD2003	N-Channel Silicon MOSFET	Sanyo Semiconductor Corporation
FTD2058	NPN Transistor	First Silicon
FTD220	N-Channel MOSFET	IPS

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FTD2012 N- Channel Silicon MOS FET Load S/W USE TENTATIVE Features • Low ON-state resistance. • 4V drive. • Mount height of 1.1mm.

Published: Mar 23, 2005 |