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FSS132 - Load Switching Applications

Key Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Package Dimensions unit:mm 2116 [FSS132] 8 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Dra.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6398 P-Channel Silicon MOSFET FSS132 Load Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2116 [FSS132] 8 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Conditions Ratings –30 ±20 –7 Unit V V A A W ˚C ˚C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2×0.8mm) –48 1.