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FSS106 - P-Channel Silicon MOSFET

Key Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • 4V drive. P-Channel Silicon MOSFET FSS106 DC/DC Converter.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6476 Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. P-Channel Silicon MOSFET FSS106 DC/DC Converter Applications Package Dimensions unit:mm 2116 [FSS106] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta = 25˚C 0.595 1.27 0.43 Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.