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Ordering number:EN651D
DBA100
Diffused Junction Silicon Diode
10.0A Single-Phase Bridge Rectifier
Features
· Plastic molded structure. · Glass passivation for high reliability. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=10.0A.
Package Dimensions
unit:mm 1090
[DBA100]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Peak Reverse Voltage Average Recitified Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg Conditions DBA100C 200 → → → → → DBA100G 600 3.7 10.0 200 150 –30 to +150 Unit V A A A
Ta=40˚C Ta=40˚C, with 200×200×1.5mm3 AI fin
˚C ˚C
Electrical Characteristics at Ta = 25˚C, per constituent element of bridge
Parameter Forward Voltage Reverse Current Symbol VF IR IF=5.
DBA100 Datasheet
