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D2627 - NPN Triple Diffused Planar Silicon Transistor

Features

  • High speed.
  • High breakdown voltage(VCBO=1500V).
  • High reliability(Adoption of HVP process).
  • Adoption of MBIT process.
  • On-chip damper diode. Package Dimensions unit : mm 2079C 10.0 3.2 [2SD2627] 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 14.0 0.75 1 23 2.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse.

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Ordering number : ENN6478 2SD2627 NPN Triple Diffused Planar Silicon Transistor 2SD2627 Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Package Dimensions unit : mm 2079C 10.0 3.2 [2SD2627] 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 14.0 0.75 1 23 2.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Electrical Characteristics at Ta=25°C Tc=25°C 2.55 2.
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