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CPH5601 - Ultrahigh-Speed Switching Applications

Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive.
  • Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting. Package Dimensions unit:mm 2168 [CPH5601] 2.9 5 4 3 0.6 0.2 0.15 1 0.95 2 0.4 0.6 1.6 2.8 0.05 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6439 P-Channel Silicon MOSFET CPH5601 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting. Package Dimensions unit:mm 2168 [CPH5601] 2.9 5 4 3 0.6 0.2 0.15 1 0.95 2 0.4 0.6 1.6 2.8 0.05 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.4 1 : Drain1 2 : Drain2 3 : Gate2 4 : Source 5 : Gate1 SANYO : CPH5 0.2 0.7 0.9 Ratings –20 ±10 –1.0 –4.0 0.
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