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CPH3145 - Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation. Specifications ( ) : CPH3145 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Cu.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
CPH3140 PNP / NPN Epitaxial Planar Silicon Transistors
CPH3143 PNP / NPN Epitaxial Planar Silicon Transistors
CPH3144 PNP / NPN Epitaxial Planar Silicon Transistors
CPH3146 PNP Epitaxial Planar Silicon Transistor
CPH3147 High-Current Switching Applications

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN8166 CPH3145 / CPH3245 CPH3145 / CPH3245 Applications • PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation.