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C5690 - 2SC5690

Features

  • High speed.
  • High breakdown voltage(VCBO=1500V).
  • High reliability(Adoption of HVP process).
  • Adoption of MBIT process.
  • On-chip damper diode. Package Dimensions unit : mm 2174A [2SC5690] 16.0 3.4 5.6 3.1 22.0 8.0 0.8 21.0 5.0 4.0 2.8 2.0 2.1 0.7 0.9 20.4 Specifications Absolute Maximum Ratings at Ta=25°C 12 3 5.45 5.45 3.5 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Parameter Collector-to-Base Voltage Collector-to-Emitter Voltag.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Package Dimensions unit : mm 2174A [2SC5690] 16.0 3.4 5.6 3.1 22.0 8.0 0.8 21.0 5.0 4.0 2.8 2.0 2.1 0.7 0.9 20.4 Specifications Absolute Maximum Ratings at Ta=25°C 12 3 5.45 5.45 3.
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