C4770 - 2SC4770

Sanyo Semicon Device

Datasheet Details

High speed (tf=100ns typ).
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process. www. DataSheet4U. com Package Dimensions unit:mm 2039D [2SC4770] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collecto.

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Sanyo Semicon Device C4770-like datasheet

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