C4770
Features
- High speed (tf=100ns typ).
- High breakdown voltage (VCBO=1500V).
- High reliability (Adoption of HVP process).
- Adoption of MBIT process. ..
Package Dimensions unit:mm 2039D
[2SC4770]
3.4 16.0 5.0 8.0 5.6 3.1
2.8 2.0 20.4 1.0
3 3.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25˚C
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
Conditions
Ratings 1500 800 6 7 16 3 60 150
- 55 to +150
Unit V V V A A W W
˚C ˚C
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES VCB=800V, IE=0 VCE=1500V, RBE=0 800...
