NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition Color Display
Horizontal Deflection Output Applications
· High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
w w w . D a t a S ·hAedeopt t4ioUn .ocf Mo mBIT process.
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
Absolute Maximum Ratings at Ta = 25˚C
Collector Current (Pulse)
–55 to +150
Electrical Characteristics at Ta = 25˚C
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
VBE(sat) IC=5A, IB=1.7A
* : The 2SC4770 is classified by 5A hFE as follows : hFE 3 to 5
4 to 6
5 to 8
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12099HA (KT)/21297TS (KOTO)/N130MH, JK (KOTO) No.3666–1/4