High reliability (Adoption of HVP process). Package Dimensions
unit:mm 2010C
[2SC4578]
10.2 3.6 5.1 2.7 6.3 4.5 1.3
18.0
5.6
1.2
14.0
15.1
0.8
0.4
1
2
3 2.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO V.
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Ordering number:EN3242
NPN Triple Diffused Planar Silicon Transistor
2SC4578
900V/50mA Switching Applications
Features
· High breakdown voltage. · Small Cob. · Wide ASO. · High reliability (Adoption of HVP process).
Package Dimensions
unit:mm 2010C
[2SC4578]
10.2 3.6 5.1 2.7 6.3 4.5 1.3
18.0
5.6
1.2
14.0
15.1
0.8
0.4
1
2
3 2.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
2.55
2.55
1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46
Ratings 1700 900 5 50 150 1.
C4578 Datasheet
