C4123
Features
- High speed (tf=100ns typ).
- High breakdown voltage (VCBO=1500V).
- High reliability (Adoption of HVP process).
- Adoption of MBIT process.
- On-chip damper diode.
Package Dimensions unit:mm 2039D
[2SC4123]
16.0 3.4
5.6 3.1
5.0 8.0 22.0
21.0 4.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat)
VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100m A, IB=0 VEB=4V, IC=0 IC=5A, IB=1.2A IC=5A, IB=1.2A
2.8 2.0 1.0
5.45 5.45
3.5 20.4
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