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C3807 Datasheet

NPN Epitaxial Planar Silicon Transistor

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Ordering number:EN2018A
NPN Epitaxial Planar Silicon Transistor
2SC3807
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Applications
· Low frequency general-purpose amplifiers, drivers.
Features
· Large current capacity (IC=2A).
· Adoption of MBIT process.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage
(VCE(sat)0.5V).
· High VEBO (VEBO15V).
Package Dimensions
unit:mm
2043A
[2SC3807]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=20V, IE=0
VEB=10V, IC=0
VCE=5V, IC=500mA
VCE=5V, IC=1A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
B : Base
C : Collector
E : Emitter
SANYO : TO-126LP
Ratings
30
25
15
2
4
1.2
15
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
800 1500
600
260
27
max
0.1
0.1
3200
Unit
µA
µA
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3098HA (KT)/5257KI/D016AT, TS No.2018–1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

C3807 Datasheet

NPN Epitaxial Planar Silicon Transistor

No Preview Available !

www.DataSheet.co.kr
2SC3807
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=1A, IB=20mA
IC=1A, IB=20mA
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
Switching Time Test Circuit
Ratings
min typ
0.15
0.85
30
25
15
0.14
1.35
0.1
max
0.5
1.2
Unit
V
V
V
V
V
µs
µs
µs
No.2018–2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number C3807
Description NPN Epitaxial Planar Silicon Transistor
Maker Sanyo Semicon Device
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C3807 Datasheet PDF






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