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C3788 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • High breakdown voltage : VCEO≥200V.
  • Small reverse transfer capacitance and excellent high frequency cahaceteristic : Cre=1.2pF (NPN), 1.7pF (PNP).
  • Adoption of FBET process. Package Dimensions unit:mm 2042A [2SA1478/2SC3788] ( ) : 2SA1478 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC J.

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Ordering number:EN2253A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1478/2SC3788 High-Definition CRT Display Video Output Applications Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high frequency cahaceteristic : Cre=1.2pF (NPN), 1.7pF (PNP). · Adoption of FBET process.