900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Sanyo Electric Components Datasheet

C3779 Datasheet

2SC3779

No Preview Available !

Ordering number:ENN1954C
NPN Epitaxial Planar Silicon Transistor
2SC3779
UHF Low-Noise Amplifier,
Wide-Band Amplifier Applications
Applications
· UHF low-noise amplifiers, wide-band amplifiers.
Features
· Small noise figure : NF=1.5dB typ (f=0.9GHz).
· High power gain : MAG=14dB typ (f=0.9GHz).
· High cutoff frequency : fT=5GHz typ.
Package Dimensions
unit:mm
2004B
[2SC3779]
5.0
4.0 4.0
0.45
0.5
0.45 0.44
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1.3 1.3
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
Gain-Bandwidth Product
fT
Output Capacitance
Cob
Reverse Transfer Capacitance
Cre
* : The 2SC3779 is classified by 20mA hFE as follows :
VCB=12V, IE=0
VEB=2V, IC=0
VCE=10V, IC=20mA
VCE=10V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
Rank
C
D
hFE 40 to 80 60 to 120
E
100 to 200
1 : Base
2 : Emitter
3 : Collector
SANYO : NP
Ratings
20
12
3
100
40
600
150
55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ max
Unit
1.0 µA
10 µA
40* 200*
5.0 GHz
1.0 pF
0.7 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62404TN (PC)/D0198HA (KT)/5318MO/3117AT, TS No.1954–1/5


Sanyo Electric Components Datasheet

C3779 Datasheet

2SC3779

No Preview Available !

Continued from preceding page.
Parameter
Forward Transfer Gain
Maximum Available Power Gain
Noise Figure
2SC3779
Symbol
Conditions
| S21e |2
MAG
NF
VCE=10V, IC=20mA, f=0.9GHz
VCE=10V, IC=20mA, f=0.9GHz
VCE=10V, IC=5mA, f=0.9GHz,
See specified Test Circuit.
Ratings
min typ
8.5 10
14
1.5
max
3.0
Unit
dB
dB
dB
NF Test Circuit
3
VB
INPUT
2k
C1 L1
C2 C3
1
VCC
CH
L2
L3
C4 C5
OUTPUT
2
900MHz
C1 ~5pF
C2 ~10pF
C3 ~10pF
C4 ~10pF
C5 ~10pF
L1 W 1.5mm, l 25mm
Strip line
L2 W 4mm, l 25mm
Strip line
L3 0.5φ, l 40mm
CH 2t+bead core
IC -- VBE
120
VCE=10V
100
80
60
40
20
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-to-Emitter Voltage, VBE V ITR05986
hFE -- IC
3
VCE=10V
2
100
7
5
3
2
10
5 7 1.0
2 3 5 7 10 2 3 5 7 100 2
Collector Current, IC mA
ITR05987
No.1954–2/5


Part Number C3779
Description 2SC3779
Maker Sanyo Semicon Device
PDF Download

C3779 Datasheet PDF






Similar Datasheet

1 C3770 2SC3770
Sanyo
2 C3771 2SC3771
Sanyo
3 C3772 2SC3772
Sanyo Semicon Device
4 C3773 2SC3773
Sanyo Semicon Device
5 C3774 2SC3774
Sanyo
6 C3775 2SC3775
Sanyo
7 C3776 2SC3776
Sanyo
8 C3777 2SC3777
Sanyo
9 C3778 2SC3778
Sanyo





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy