C3642 - 2SC3642

Features

High reliability (Adoption of HVP process).
Fast speed.
High breakdown voltage.
Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3642] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Electrical Characterist.

Sanyo Semicon Device

Datasheet Details

Part number	C3642
Manufacturer	Sanyo Semicon Device
File Size	117.30 KB
Description	2SC3642
Datasheet	C3642 Datasheet
Additional preview pages of the C3642 datasheet.

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Full PDF Text Transcription

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Ordering number:EN1626C NPN Triple Diffused Planar Silicon Transistor 2SC3642 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process.

Published: Feb 9, 2015 |