C3636 - 2SC3636

Features

High reliability (Adoption of HVP process).
Fast speed.
High breakdown voltage.
Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3636] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta.

Sanyo Semicon Device

Datasheet Details

Part number	C3636
Manufacturer	Sanyo Semicon Device
File Size	115.91 KB
Description	2SC3636
Datasheet	C3636 Datasheet
Additional preview pages of the C3636 datasheet.

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Full PDF Text Transcription

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Ordering number:EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process.

Published: Jan 27, 2015 |