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Sanyo Electric Components Datasheet

B927 Datasheet

2SB927

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Ordering number:ENN1029C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB927/2SD1247
Large-Current Driving Applications
Applications
· Power supplies, relay drivers, lamp drivers, electrical
equipment.
Features
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Large current capacity and wide ASO.
www.DataSheet4U.com
Package Dimensions
unit:mm
2006B
[2SB927/2SD1247]
6.0
5.0 4.7
0.5
0.6
0.5 0.5
( ) : 2SB927
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=()20V, IE=0
Emitter Cutoff Current
IEBO VEB=()4V, IC=0
DC Current Gain
hFE1
hFE2
VCE=()2V, IC=()0.1A
VCE=()2V, IC=()1.5A
Gain-Bandwidth Product
fT VCE=()10V, IC=()50mA
Common Base Output Capacitance
Cob VCB=()10V, f=1MHz
* : The 2SB927/2SD1247 are classified by 0.1A hFE as follows :
Rank
R
S
T
U
hFE 100 to 200 140 to 280 200 to 400 280 to 560
123
1.45 1.45
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
Ratings
(–)30
(–)25
(–)6
(–)2.5
(–)5
1.0
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
()0.1 µA
()0.1 µA
100*
560*
65 130
150 MHz
19(32)
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0303TN (KT)/92098HA (KT)/4077KI/3075KI/1263KI, TS No.1029–1/3


Sanyo Electric Components Datasheet

B927 Datasheet

2SB927

No Preview Available !

Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
2SB927/2SD1247
Symbol
Conditions
VCE(sat) IC=()1.5A, IB=()75mA
VBE(sat) IC=()1.5A, IB=()75mA
Ratings
min typ max
Unit
0.18
0.4 V
(0.35) (0.6) V
0.85
1.2 V
--2.0
2SB927
From top
--200mA
--1.6
--150mA
--100mA
www.DataSheet--45U0.mcAom
--1.2 --40mA
--30mA
--0.8
IC -- VCE
--20mA
--10mA
--8mA
--6mA
--4mA
--0.4 --2mA
0 IB=0
0
--200
--400
--600
--800
--1000
Collector-to-Emitter Voltage, VCE – mVITR08788
IC -- VBE
3.2
VCE=2V
2.8
2.4
2.0
1.6
1.2
0.8
0.4 (For PNP, minus sign is
omitted.)
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR08790
fT -- IC
1000
7 VCE=10V
5
3
2SD1247
2 2SB927
100
7
5
3
2
10 (For PNP, minus sign is omitted.)
10
2 3 5 7 100
2 3 5 7 1000 2 3
Collector Current, IC – mA
ITR08792
2.0
2SD1247
1.6
1.2
0.8
IC -- VCE
30mA
20mA
10mA
8mA
6mA
4mA
0.4 2mA
0
0
1000
7
5
3
2
100
7
5
3
2
IB=0
200 400 600 800 1000
Collector-to-Emitter Voltage, VCE – mVITR08789
hFE -- IC
VCE=2V
2SD1247
2SB927
10
7 (For PNP, minus sign is omitted.)
5
0.01 2 3 5 0.1 2 3 5 1.0 2
Collector Current, IC – A
Cob -- VCB
100
3 5 10
ITR08791
f=1MHz
7
5
2SB927
3
2SD1247
2
10 (For PNP, minus sign is omitted.)
1.0
23
5 7 10
23
5
Collector-to-Base Voltage, VCB -- V ITR08793
No.1029–2/3


Part Number B927
Description 2SB927
Maker Sanyo Semicon Device
Total Page 3 Pages
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