PNP/NPN Epitaxial Planar Silicon Transistors
Large-Current Driving Applications
· Power supplies, relay drivers, lamp drivers, electrical
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Large current capacity and wide ASO.
( ) : 2SB927
Absolute Maximum Ratings at Ta = 25˚C
Collector Current (Pulse)
Electrical Characteristics at Ta = 25˚C
Collector Cutoff Current
ICBO VCB=(–)20V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
fT VCE=(–)10V, IC=(–)50mA
Common Base Output Capacitance
Cob VCB=(–)10V, f=1MHz
* : The 2SB927/2SD1247 are classified by 0.1A hFE as follows :
hFE 100 to 200 140 to 280 200 to 400 280 to 560
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
–55 to +150
min typ max
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0303TN (KT)/92098HA (KT)/4077KI/3075KI/1263KI, TS No.1029–1/3