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B927 - 2SB927

Key Features

  • Adoption of FBET, MBIT processes.
  • Low saturation voltage.
  • Large current capacity and wide ASO. www. DataSheet4U. com 0.5 0.6 4.7 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 ( ) : 2SB927 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN1029C PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247 Large-Current Driving Applications Applications · Power supplies, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit:mm 2006B [2SB927/2SD1247] 6.0 5.0 Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. www.DataSheet4U.com 0.5 0.6 4.7 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 ( ) : 2SB927 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.45 1.