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Ordering number : EN8649
3LP03SS
P-Channel Silicon MOSFET
3LP03SS
Features
• • • •
General-Purpose Switching Device Applications
Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD (TYP 300V) [with a protection diode connected between the gate and source].
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage (*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings --30 --10 --0.25 --1 0.