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3LP02SP - Ultrahigh-Speed Switching Applications

Key Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive. Package Dimensions unit:mm 2180 [3LP02SP] 4.0 3.0 2.2 0.4 0.5 0.6 1.8 15.0 0.4 0.4 1 2 1.3 0.7 3 1.3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 3.0 3.8nom 1 : Sour.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number:ENN6554 P-Channel Silicon MOSFET 3LP02SP Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2180 [3LP02SP] 4.0 3.0 2.2 0.4 0.5 0.6 1.8 15.0 0.4 0.4 1 2 1.3 0.7 3 1.3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 3.0 3.8nom 1 : Source 2 : Drain 3 : Gate SANYO : SPA Ratings –30 ±10 –0.2 –0.8 0.