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3LP01N - P-Channel Silicon MOSFET

Key Features

  • Package Dimensions unit : mm 2178 5.0 4.0 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. [3LP01N] 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 1 : Source 2 : Drain 3 : Gate 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN6646 3LP01N P-Channel Silicon MOSFET 3LP01N Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2178 5.0 4.0 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. [3LP01N] 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 1 : Source 2 : Drain 3 : Gate 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1.3 SANYO : NP Ratings -30 ± 10 --0.1 --0.4 0.