30A01S Description
ENN7511 30A01S PNP Epitaxial Planar Silicon Transistor 30A01S Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions unit : mm 2106A [30A01S] 0.3 0.75 0.6 Low-frequency power amplifier, muting circuit.
30A01S Key Features
- Large current capacity. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=0.67Ω[IC=0.3A, IB=15mA].