2SK1464
Features
- Low ON-state resistance.
- Ultrahigh-speed switching.
- Converters.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Package Dimensions unit:mm 2076B
[2SK1464]
16.0 3.4
5.6 3.1
5.0 8.0 22.0
21.0 4.0
2.8 2.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1m A, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=900V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±30V, VDS=0
Cutoff...
