2SJ316
2SJ316 is P-Channel MOSFET manufactured by SANYO.
Features
- Low ON resistance.
- Ultrahigh-speed switching.
- Low-voltage drive.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Package Dimensions unit:mm 2062A
[2SJ316]
4.5 1.6
1.0 2.5 4.25max
0.4 0.5
32 1.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on ceramic board (250mm2× 0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Marking : JG
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) | yfs |
RDS(on) RDS(on)
ID=- 1m A, VGS=0 VDS=- 12V, VGS=0 VGS=±12V, VDS=0 VDS=- 10V, ID=- 1m A VDS=- 10V, ID=- 500m A ID=- 500m A, VGS=- 10V ID=- 500m A, VGS=-...
