2SJ272 - P-Channel MOSFET

Features

• Low ON resistance.
• Ultrahigh-speed switching.
• Low-voltage drive.
• Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SJ272] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Conditions PW≤10µs, duty cycle≤1% Allowable Power Dissipation Channel Te.