900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Sanyo Electric Components Datasheet

2SC6089 Datasheet

NPN Triple Diffused Planar Silicon Transistor

No Preview Available !

Ordering number : ENA0995
2SC6089
SANYO Semiconductors
DATA SHEET
2SC6089
NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal Deflection
Output Applications
Features
High speed.
High breakdown voltage (VCBO=1500V).
Adoption of high reliability HVP process.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Parameter
www.DataSheet4U.com
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCB=800V, IE=0A
VCE=1500V, RBE=0
IC=100mA, IB=0A
VEB=4V, IC=0A
Ratings
1500
700
5
10
25
3.0
80
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
min
700
Ratings
typ
max
Unit
10 µA
1.0 mA
V
1.0 mA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0507KC TI IM TC-00000003 No. A0995-1/4


Sanyo Electric Components Datasheet

2SC6089 Datasheet

NPN Triple Diffused Planar Silicon Transistor

No Preview Available !

2SC6089
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Fall Time
Symbol
VCE(sat)
VBE(sat)
hFE1
hFE2
tf
Conditions
IC=7.2A, IB=1.44A
IC=7.2A, IB=1.44A
VCE=5V, IC=1A
VCE=5V, IC=8A
IC=5A, IB1=1A, IB2=--2A
Ratings
min typ
15
5
max
3
1.5
Unit
V
V
7
0.2 µs
Package Dimensions
unit : mm (typ)
7504-001
16.0 3.4 5.6
3.1
2.8
2.0
0.7
123
5.45
5.45
2.1
0.9
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
50
+
100µF
VBE= --5V
OUTPUT
RL
40
+
470µF
VCC=200V
12
10
8
www.DataSheet4U.com
6
4
IC -- VCE
1.8A 1.6A 1.4A 1.2A 2.0A
1.0A
0.8A
0.6A
0.4A
0.2A
2
IB=0A
0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT03004
hFE -- IC
100
7 Ta=120°C
VCE=5V
5 25°C
3 --40°C
2
10
7
5
3
2
1.0
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT03006
12 IC -- VBE
VCE=5V
10
8
6
4
2
0
0
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.1
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT03005
VCE(sat) -- IC
IC / IB=5
25°C
Ta=120°C--40°C
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT03007
No. A0995-2/4


Part Number 2SC6089
Description NPN Triple Diffused Planar Silicon Transistor
Maker Sanyo Semicon Device
PDF Download

2SC6089 Datasheet PDF






Similar Datasheet

1 2SC6080 NPN Epitaxial Planar Silicon Transistor
Sanyo Semicon Device
2 2SC6081 NPN Epitaxial Planar Silicon Transistor
Sanyo Semicon Device
3 2SC6082 TO-220F NPN Transistor
INCHANGE
4 2SC6082 NPN Epitaxial Planar Silicon Transistor
Sanyo Semicon Device
5 2SC6082 Bipolar Transistor
ON Semiconductor
6 2SC6082 TO-252 NPN Transistor
INCHANGE
7 2SC6082 TO-263 NPN Transistor
INCHANGE
8 2SC6083 NPN Triple Diffused Planar Silicon Transistor
Sanyo Semicon Device
9 2SC6083A NPN Triple Diffused Planar Silicon Transistor
Sanyo Semicon Device





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy