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2SC5646 - NPN TRANSISTOR

Features

  • Package Dimensions unit : mm 2159 [2SC5646] 1.4.
  • Low-noise use : NF=1.5dB typ (f=2GHz). High cut-off frequency : fT=10GHz typ (VCE=1V). : fT=12.5GHz typ (VCE=3V). Low operating voltage. High gain :S21e2=9.5dB typ (f=2GHz). Ultraminiature and thin flat leadless package (1.4mm!0.8mm!0.6mm). 0.3 0.25 0.1 3 0.8 0.2 0.3 1 0.45 2 1.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN6606 2SC5646 NPN Epitaxial Planar Silicon Transistor 2SC5646 UHF to S Band Low-Noise Amplifier andOSC Applications Features • • Package Dimensions unit : mm 2159 [2SC5646] 1.4 • • • Low-noise use : NF=1.5dB typ (f=2GHz). High cut-off frequency : fT=10GHz typ (VCE=1V). : fT=12.5GHz typ (VCE=3V). Low operating voltage. High gain :S21e2=9.5dB typ (f=2GHz). Ultraminiature and thin flat leadless package (1.4mm!0.8mm!0.6mm). 0.3 0.25 0.1 3 0.8 0.2 0.3 1 0.45 2 1.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 0.
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