High cutoff frequency : fT=8GHz typ. Package Dimensions
unit:mm 2161
[2SC5502]
0.65 0.65 0.3 4 3
0.425
1
2 0.6 0.65 0.5 2.0
0.425
1.25 2.1
0 to 0.1
0.2
0.15
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO V.
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Ordering number:ENN6279
NPN Epitaxial Planar Silicon Transistor
2SC5502
High-Frequency Low-Noise Amplifier Applications
Features
· Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=8GHz typ.
Package Dimensions
unit:mm 2161
[2SC5502]
0.65 0.65 0.3 4 3
0.425
1
2 0.6 0.65 0.5 2.0
0.425
1.25 2.1
0 to 0.1
0.2
0.15
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Mounted on a ceramic board (250mm2× 0.8mm) Conditions
1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4
0.7 0.
2SC5502 Datasheet
