Adoption of MBIT process. a t a S h e e t 4 U . c o m
Package Dimensions
unit:mm 2039D
[2SC5451]
3.4 16.0 5.6 3.1
w w w . D
5.0 8.0 21.0 22.0
20.4
2.8 2.0 1.0
4.0
2.0 0.6
1
2
3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector.
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Ordering number:EN5956
NPN Triple Diffused Planar Silicon Transistor
2SC5451
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. a t a S h e e t 4 U . c o m
Package Dimensions
unit:mm 2039D
[2SC5451]
3.4 16.0 5.6 3.1
w w w . D
5.0 8.0 21.0 22.0
20.4
2.8 2.0 1.0
4.0
2.0 0.6
1
2
3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
5.45
Conditions
3.5
5.
2SC5451 Datasheet
