2SC5451 transistor equivalent, npn triple diffused planar silicon transistor.
* High speed.
* High breakdown voltage (VCBO=1600V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process. a t a S h e e t 4 U . c o m.
Features
* High speed.
* High breakdown voltage (VCBO=1600V).
* High reliability (Adoption of HVP process). .
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