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Sanyo Electric Components Datasheet

2SC4453 Datasheet

NPN Epitaxial Planar Silicon Transistor

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Ordering number : ENN2812A
2SC4453
NPN Epitaxial Planar Silicon Transistor
2SC4453
High-Speed Switching Applications
Features
Fast switching speed.
Low collector saturation voltage.
High gain-bandwidth product.
Small collector capacity.
Ultrasmall-sized package permitting the 2SC4453-
applied sets to be made small and slim.
Package Dimensions
unit : mm
2018B
[2SC4453]
0.4
3
0.16
0 to 0.1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
Marking : ST
* : The 2SC4453 is classified by 5mA hFE as follows :
Rank
2
3
4
hFE 50 to 100 70 to 140 100 to 200
Conditions
VCB=20V, IE=0
VEB=3V, IC=0
VCE=1V, IC=10mA
1 0.95 0.95 2
1.9
2.9
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Ratings
40
40
15
5
200
500
40
200
150
--55 to +150
Unit
V
V
V
V
mA
mA
mA
mW
°C
°C
min
50*
Ratings
typ
max
Unit
0.1 µA
0.1 µA
90 200*
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2001 TS IM / D2598 HA (KT) / O278 MO, TS No.2812-1/4


Sanyo Electric Components Datasheet

2SC4453 Datasheet

NPN Epitaxial Planar Silicon Transistor

No Preview Available !

2SC4453
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn ON Time
Storage Time
Fall Time
ton, toff Test Circuit
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=10V, IC=10mA
VCB=5V, f=1MHz
IC=10mA, IB=1mA
IC=10mA, IB=1mA
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
tstg Test Circuit
min
450
40
15
5
Ratings
typ
750
1.4
0.13
0.80
8.0
6.0
12
max
4.0
0.25
0.85
Unit
MHz
pF
V
V
V
V
V
ns
ns
ns
VIN 3.3k
PW300ns
D.C.2%
50
220
3.3k
0.0023µF 0.0023µF
0.005µF 0.005µF
VOUT
0.1µF
50
0.1µF
VBB
0.1µF +
3V
VIN
PW300ns
D.C.2%
"A" 0.1µF VOUT
500
890
1k
0.1µF
50
500
0.0023µF 0.0023µF
90
+
+ 10µF
11V
+
10µF
+
10V
VIN
10%
10%
VIN
VOUT
VOUT
90%
90%
ton
VBB= --3V
VIN=+15V
toff
VBB=+12
VIN= --15V
0
VIN
--10V
0
VOUT
10% Waveforms at "A"
10%
tstg
IC -- VCE
240
200 3.5mA 3.0mA
2.5mA
160 2.0mA
1.5mA
120
1.0mA
80 0.5mA
40
0 IB=0
0 0.4 0.8 1.2 1.6 2.0
Collector-to-Emitter Voltage, VCE -- V ITR06987
IC -- VCE
24
20 160µA
140µA
16 120µA
100µA
12 80µA
60µA
8
40µA
4 20µA
0 IB=0
0 4 8 12 16 20
Collector-to-Emitter Voltage, VCE -- V ITR06988
PS No.2812-2/4


Part Number 2SC4453
Description NPN Epitaxial Planar Silicon Transistor
Maker Sanyo Semicon Device
Total Page 4 Pages
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