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2SC4134 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Adoption FBET, MBIT processes.
  • High breakdown voltage and large current capacity.
  • Fast switching speed.
  • Small and slim package permitting 2SC4134-applied sets to be made more compact Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditions Ratings Unit 120 V 100 V 6 V 1 A 2 A.

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Full PDF Text Transcription for 2SC4134 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SC4134. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : EN2510B 2SC4134 SANYO Semiconductors DATA SHEET 2SC4134 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • Power...

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on Transistor High-Voltage Switching Applications Applications • Power supplies, relay drivers, lamp drivers Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditions Ratings Unit 120 V 100 V 6 V 1 A 2 A Continued on next page.