2SB1165
2SB1165 is PNP Transistor manufactured by SANYO.
Features
- Low collector-to-emitter saturation voltage.
- High f T.
- Excellent linearity of h FE.
- Fast switching time.
Package Dimensions unit:mm 2043A
[2SB1165/2SD1722]
( ) : 2SB1165
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
ICBO IEBO h FE1 h FE2 f T
VCB=(- )40V, IE=0 VEB=(- )4V, IC=0 VCE=(- )2V, IC=(- )0.5A VCE=(- )2V, IC=(- )4A VCE=(- )5V, IC=(- )1A
Output Capacitance
Cob VCB=(- )10V, f=1MHz
- : The 2SB1165/2SD1722 are classified by 0.5A h FE as follows :
70 Q 140
100 R 200
B : Base C : Collector E : Emitter
SANYO : TO-126LP
Ratings (- )60 (- )50 (- )6 (- )5 (- )8 1.2 20 150
- 55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
70- 35
180 (130) 40(60) max (- )1 (- )1 400-
Unit µA...
