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2SB1119 - PNP Transistor

Features

  • Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1119/2SD1619] ( ) : 2SB1119 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Conditions Mounted on ceramic board (250mm2×0.8mm).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:1785A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1119/2SD1619 LF Amplifier, Electronic Governor Applications Features · Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1119/2SD1619] ( ) : 2SB1119 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Conditions Mounted on ceramic board (250mm2×0.
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