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1SS351 - Sillicon Epitaxial Schottky Barrier Diode

Sanyo Semicon Device

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Datasheet Details

Part number: 1SS351
Manufacturer: Sanyo Semicon Device
File Size: 56.42 KB
Datasheet: 1SS351_SanyoSemiconDevice.pdf
Description: Sillicon Epitaxial Schottky Barrier Diode

1SS351 Product details

Features

Series connection of 2 elements in a small-sized package facilitates high-density mounting and permits 1SS351-applied equipment to be made smaller.
Small interterminal capacitance (C=0.69pF typ).
Small forward voltage (VF=0.23V max). Package Dimensions unit:mm 1147A [1SS351] 1:Anode 2:Cathode 3:Anode, Cathode SANYO:CP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Forward Current Junction Temperature Storage Temperature Symbol VRM IF Tj T.

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Sillicon Epitaxial Schottky Barrier Diode Sanyo Semicon Device

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1SS351 Stock/Price