The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
Ordering number : ENA0188
2SB817C / 2SD1047C
www.DataSheet4U.com
2SB817C / 2SD1047C
Features
• • •
PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor
140V / 12A, AF 80W Output Applications
Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process.
Specifications ( ) : 2SB817C
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings (--)160 (--)140 (--)6 (--)12 (--)20 2.5 120 150 --55 to +150 Unit V V V A A W W °C °C
DataSheet4U.