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C5275 - 2SC5275

Key Features

  • Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz).
  • High gain : S21e2=10dB typ (f=1.5GHz).
  • High cutoff frequency : fT=11GHz typ.
  • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=7GHz type. : S21e2=5.5dB typ (f=1.5GHz). Package Dimensions unit:mm 2018B [2SC5275] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 Specifications 1 0.95 0.95 2 1.9 2.9 0.8 1.1 1 : Base 2 : Emitter 3 : Collector SANYO : CP Absolute Maximum Ratings at Ta = 25˚C Parameter Symbo.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
C5277 2SC5277
C5226 2SC5226
C5228 2SC5228
C5229 2SC5229
C5230 2SC5230

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features · Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz). · High cutoff frequency : fT=11GHz typ. · Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=7GHz type. : S21e2=5.5dB typ (f=1.5GHz). Package Dimensions unit:mm 2018B [2SC5275] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 Specifications 1 0.95 0.95 2 1.9 2.9 0.8 1.