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Ordering number:EN3688A
NPN Triple Diffused Planar Silicon Transistor
2SC4710
2100V/10mA High-Voltage Amplifier, High-Voltage Switching Applications
Features
· High breakdown voltage (VCEO min=2100V). · Small Cob (typical Cob=1.3pF). · Wide ASO. · High reliability (Adoption of HVP process). · Full isolation package.
Package Dimensions
unit:mm
2079B
[2SC4710]
10.0 3.2
4.5 2.8
3.5 7.2
16.0
0.6
16.1 3.6
0.9 1.2 0.7
14.0
0.75 1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
2.